Technology

We have developed our own IP, which enables proven design blocks to be utilised or adapted in ways to minimise cost and risk for new custom image sensor designs. We can offer:

• Low noise CMOS design, to achieve the highest possible image quality
• ​Back side illumination, to improve image sensor quantum efficiency
• ​High dynamic range, to capture the most challenging scenes
• ​Global shutter, to minimize temporal artefacts in dynamic scenes
• CCD-in-CMOS pixels, to enable ultra-fast in-pixel storage
• ​Reticle stitching, to optimise sensor size
• ​Non visible imaging techniques, for near-infrared, UV, X-ray and charged particle imaging
• ​System-on-Chip sensor architectures, allowing for simplified camera system design and optimum performance
• ​CMOS technologies between 180 nm and 65 nm process nodes, which typically offer the best compromise between image sensor performance and cost.